Vacuum sealing mechanism for a semiconductor device manufacturing apparatus having inner and outer bellows

ABSTRACT

A semiconductor device producing apparatus includes a processing chamber having an opening and capable of being vacuum sealed, a carrier member including a substrate holder, an arm member, and a substrate carrier which vertically reciprocates in the opening of the processing chamber. A vacuum bellows is divided into an upper bellows and a lower bellows that are attached to a hollow flange therebetween. The upper bellows is a double structure having an inner bellows and an outer bellows. An air inlet is formed in the hollow flange and air is introduced through the inlet into a ring-shaped space between the inner bellows and the outer bellows. Therefore, thrust caused by the vacuum in the processing chamber and applied to the hollow flange is cancelled by the pressure of the introduced air whereby a load on the driving part is relieved. As a result, a small-sized and inexpensive semiconductor device producing apparatus is obtained.

FIELD OF THE INVENTION

The present invention relates to a semiconductor device producingapparatus having a semiconductor substrate carrying means which carriesa semiconductor substrate in vacuum by a reciprocating carrier memberhaving a carrier shaft. Particularly, it relates to a sealing mechanismof the semiconductor device producing apparatus, which vacuum seals aspace between the reciprocating carrier member and a processing chamberand, more particularly, to a sealing mechanism that can reduce oreliminate the thrust applied to the carrier member. The presentinvention also relates to a method for producing a semiconductor deviceusing such a sealing mechanism.

PRIOR ART

FIG. 4 is a plan view of a semiconductor device producing apparatus. InFIG. 4, a carrier chamber 11 having a hexagonal plan is surrounded byfour reaction chambers 56a to 56d and two spare chambers 61a and 61b.The spare chamber 61a is a chamber for producing a low vacuum beginningfrom atmospheric pressure. The spare chamber 61b adjacent to the sparechamber 61a is a chamber for reaching atmospheric pressure from a lowvacuum. The carrier chamber 11 is a chamber for carrying a semiconductorsubstrate from the spare chamber 61a to the respective reaction chambers56a to 56d or from the respective reaction chambers 56a to 56d to thespare chamber 61b. A CVD apparatus is provided in each reaction chamber56a to 56d and a thin film is formed on a semiconductor substrate ineach reaction chamber as the substrate is carried thereinto from thecarrier chamber 11.

FIG. 6 is a cross-section taken along a line A--A of FIG. 4, showingsectional structures of the spare chamber 61a, the reaction chamber 56dand the carrier chamber 11. In FIG. 6, the spare chamber 61a has a firstgate 65a and a second gate 62a at the opposite side thereof. The firstand second gates 65a and 62a are opened and closed by the first andsecond gate shutters 65 and 62 which are vertically driven by the firstand second air cylinders 66 and 64, respectively. The second aircylinder 64 is provided with a vacuum bellows 63 which contracts andexpands while the second gate shutter 62 rises and falls thereby tovacuum seal the spare chamber 61a. A delivery stage 60 for deliveringthe semiconductor substrate 1 is provided on the center of the bottom ofthe spare chamber 61a. An exhaust port 68 for controlling the pressurein the chamber is provided at the center of the top of the spare chamber61a. The second gate 62a communicates with the third gate 62b of thecarrier chamber 11 via the gate connecting part 67.

The reaction chamber 56d has a fifth gate 41b which is opened and closedby the third gate shutter 41. The reaction chamber 56d has an opening atthe center of the bottom thereof, and a holder 52 having a stage 50 anda heater 51 is provided at the opening. A reactive gas inlet 55 isprovided at the top of the reaction chamber 56d. An exhaust port 57 forcontrolling the pressure in the reaction chamber 56d and for evacuatingthe chamber 56d is provided at the side of the chamber 56d. A bearing 53rotatably supports the holder 52. A seal 54 is provided between theholder 52 and the opening of the reaction chamber 56d and seals thereaction chamber 56d during the rotation of the holder 52.

The carrier chamber 11 has an opening at the center of its bottom and asemiconductor substrate carrying means 110 is provided at the openingvia a lower flange 8b. This semiconductor substrate carrying means 110comprises a case 46 including a driving part 330 for vertically drivingthe carrier shaft 7, a vacuum bellows 8 for vacuum sealing a spacebetween the carrier shaft 7 and the carrier chamber 11 while the shaft 7vertically moves, and an arm member 3a for carrying the semiconductorsubstrate 1. The arm member 3a is constituted by a rotary shaft 3 andfirst to third arms 30 to 32. The lower flange 8b is fixed to the edgeof the opening of the carrier chamber 11 by bolts 13 and O rings 10thereby to seal the carrier chamber 11. In addition, an exhaust port 45for controlling the pressure in the carrier chamber 11 is provided atthe top of the carrier chamber 11. In the driving part 330, the motor 34is driven and its driving force is transmitted to the carrier shaftdriving part 33 via the bevel gears 38 and 37 and then the ball screw39. The carrier shaft driving part 33 vertically moves along the axis ofthe bevel gear 37 and the guide 40. Reference numerals 35 and 36 arebearings for the axis of the bevel gear 37. In addition, a third gate 62and a fourth gate 41a which are opened and closed by the second gateshutter 62 and the third gate shutter 41, respectively are provided atthe both sides of the carrier chamber 11. The third gate shutter 41 isvertically moved by the third air cylinder 43. The third air cylinder 43is provided with a vacuum bellows 42 which contracts and expands whilethe third gate shutter 41 rises and falls thereby to vacuum seal thecarrier chamber 11. The fourth gate 41a communicates with the fifth gate41b of the reaction chamber 56d via the gate connection part 44.

A structure of the carrier shaft part of the semiconductor substratecarrying device 110, which is omitted in FIG. 6, will be describedhereinafter with reference to FIG. 5. In FIG. 5, the carrier shaft 7 isprovided around the rotary shaft 3 of the arm member 3a via the bearing4 and the seal 5 and a vacuum bellows 8 is provided around the carriershaft 7. The seal 5 seals up the carrier chamber 11 for the rotation ofthe rotary shaft 3. The carrier shaft 7 is fixed to the upper flange 8aby the bolts 12 and the O rings 9. The carrier shaft 7 and the vacuumbellows 8 seals the carrier chamber 11.

Description is given of the arm member 3a hereinafter. FIG. 7 is aperspective view showing the semiconductor substrate carrying means 110having the arm member 3a. The arm member 3a comprises a holder 2 onwhich the semiconductor substrate 1 is put, a rotary shaft 3, and a linkmechanism constituted by first to third arms 30 to 32. When the rotaryshaft 3 rotates, the first to third arms 30 to 32 are extended andretracted, whereby the semiconductor substrate 1 is carried from thespare chamber 61a to the respective reaction chambers 56a to 56d or fromthe respective reaction chambers 56a to 56d to the spare chamber 61a.

Description is given of the operation hereinafter. While the second andthird gate shutters 62 and 41 are pushed up, the first gate shutter 65is pulled down, whereby the spare chamber 61a is opened. Thesemiconductor substrate 1 is put on the delivery stage 60 in the sparechamber 61a by an appropriate means (not shown). Then, the first aircylinder 66 is operated to push up the first gate shutter 65, wherebythe spare chamber 61a, the carrier chamber 11 and the reaction chamber56d are respectively sealed. The respective chambers 61a, 11 and 56dwhich are sealed are evacuated to 1×10⁴ Pa through the exhaust ports 68,45, and 57, respectively.

Then, the second gate shutter 62 is pulled down to open the second andthird gates 62a and 62b. Then, the semiconductor substrate 1 on thedelivery stage 60 in the spare chamber 61a is carried into the carrierchamber 11 by the semiconductor substrate carrying means 110.

As shown in FIG. 8(a), the driving part 330 and the arm member 3a of thesemiconductor substrate carrying means 110 are at standstill (refer to(1) in FIG. 8(a)), the rotary shaft 3 of the arm member 3a is rotated byan appropriate means (not shown) and then the first to third arms 30 to32 are extended by the link mechanism (refer to (2)). Then, as shown inFIG. 8(b), the holder 2 at the end of the arm member 3a advances beneaththe semiconductor substrate 1 on the delivery stage 60 in the sparechamber 61a, that is, advances in a direction shown by arrow a. Then,the motor 34 of the driving part 330 is driven and the carrier shaftdriving part 33 rises up. The semiconductor substrate 1 is picked up bythe holder 2 in the direction shown by arrow b and then it is carriedfrom the spare chamber 61a to the carrier chamber 11.

Thereafter, the arm member 3a returns to the state (1) in FIG. 8(a). Atthis time, the carrier shaft driving part 33 is in its raised position.Then, the gate shutter 62 is pushed up to seal the respective chambers61a, 11 and 56d, and then these chambers are evacuated to 100 Pa throughthe exhaust ports 68, 45, and 57, respectively.

In the state where the respective chambers 61a, 11 and 56d have the samepressure, the third gate shutter 41 is pulled down to open the fourthgate 41a and the fifth gate 41b. Then, the rotary shaft 3 of the armmember 3a is rotated by an appropriate means (not shown) similarly asdescribed above and the arm member 3a is extended by the link mechanism(refer to (3) in FIG. 8(a)), whereby the semiconductor substrate 1 iscarried to above the stage 50 in the reaction chamber 56d. Then, thecarrier shaft driving part 33 is lowered to put the semiconductorsubstrate 1 on the stage 50. Then, the arm member 3a returns to thestate (1) in FIG. 8(a). In this state, the third gate shutter 41 ispushed to seal up the respective chambers 61a, 11 and 56d and then thesechambers are evacuated to 1 to 10 Pa through the exhaust ports 68, 45,and 57, respectively.

Thereafter, the semiconductor substrate 1 on the stage 50 in thereaction chamber 56d is heated to 300° to 500° C. by the heater 51, andthe substrate 1 easily reacts with silane (SiH₄) used as a reactive gas.Diborane (B₂ H₂) or phosphine (PH₃) is added to this reactive gas fromthe reactive gas inlet 55 and the reactive gas is blown upon thesemiconductor substrate 1 at a pressure of 100 to 1000 Pa. Then, theholder 52 is slowly rotated at a speed of 1 to 10 rpm by an appropriatemeans (not shown) thereby to uniformly form a thin film of about 1micron thickness on the semiconductor substrate 1. The gas is exhaustedthrough the exhaust port 57.

In addition, the extension and retraction of the first to third arms 30to 32 by the link mechanism of the arm member 3a and the rotation of therotary shaft 3 of the arm member 3a while the semiconductor substrate 1is carried from the spare chamber 61a to the respective reactionchambers 56a to 56d are well known and disclosed in, for example,Japanese Published Utility Model Application No. 62-150087.

When the semiconductor substrate 1 whose surface is treated is carriedfrom the reaction chamber 56d to the spare chamber 61b, theabove-described operation is inversely carried out. That is, therespective chambers 61a, 11 and 56d transit to complete vacuum statefrom a low vacuum state and then the semiconductor substrate is carriedfrom the reaction chamber 56d to the carrier chamber 11. Then, therespective chambers 61a, 11 and 56d transit to an atmospheric state fromvacuum state and then the semiconductor substrate is carried from thecarrier chamber 11 to the spare chamber 61b.

In addition, the above-described semiconductor substrate is a siliconsubstrate and the thin film formed thereon is a silicon oxidized film.

In the semiconductor device producing apparatus having the sealingmechanism constituted as described above, a difference in pressuresbetween the vacuum carrier chamber 11 and the outside air is generatedand a thrust of 300 Kg/cm² which pulls the carrier shaft into thecarrier chamber is generated by the differential pressure. In this case,the power of the driving part for driving the carrier shaft verticallyis equal to the sum of the weight of the carrier shaft and the abovethrust. Then, the guide part for guiding the vertical movement isrequired to be strengthened and the whole apparatus is large in size dueto the power of the driving part, resulting in a costly device.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a small-sized andinexpensive sealing mechanism for a semiconductor device producingapparatus, that can reduce or remove the thrust applied to the carriershaft.

It is another object of the present invention to provide a method forproducing a semiconductor device, using the above sealing mechanism.

Other objects and advantages of the present invention will becomeapparent from the detailed description given hereinafter; it should beunderstood, however, that the detailed description and specificembodiment are given by way of illustration only, since various changesand modifications within the spirit and scope of the invention willbecome apparent to those skilled in the art from this detaileddescription.

According to a first aspect of the present invention, a semiconductordevice producing apparatus includes a carrier chamber having an openingand capable of being vacuum sealed, a carrier member comprising asubstrate holder, an arm member and means for carrying a substrate,which vertically reciprocates in the opening of the carrier chamber, andvacuum bellows which seal a space between the carrier chamber and thecarrier member. The vacuum bellows comprises an upper bellows and alower bellows provided with a hollow flange therebetween and the upperis a double structure having an inner bellows and an outer bellows. Anair inlet penetrates the hollow flange and air is introduced into aring-shaped space between the inner bellows and the outer bellowsthrough the air inlet. Therefore, thrust caused by the vacuum theprocessing chamber and applied to the hollow flange is canceled by thepressure of the introduced air and then the thrust can be reduced orremoved, whereby the load of the driving part can be relieved. As aresult, a small-sized and inexpensive semiconductor device producingapparatus can be obtained.

According to a second aspect of the present invention, a method forproducing a semiconductor device uses an apparatus including a carrierchamber having an opening and capable of being vacuum sealed, a carriermember comprising a substrate holder, an arm member and means forcarrying the substrate which vertically reciprocates in the opening ofthe carrier chamber, and a sealing mechanism. This sealing mechanism isfixed to the carrier member and includes a flange having an air inlet, afirst bellows and a second bellows. The first bellows is a doublestructure having an inner bellows and an outer bellows, and air isintroduced into a ring-shaped space formed between the inner bellows andouter bellows through the air inlet of the flange. The second bellowsseals the carrier chamber. The production process is as follows. A sparechamber and the carrier chamber are evacuated and the semiconductorsubstrate is carried from the spare chamber to the carrier chamber.Then, the carrier chamber and a reaction chamber are brought to a lowvacuum and the semiconductor substrate is carried from the carrierchamber to the reaction chamber. The semiconductor substrate is treatedin the reaction chamber. Thereafter, the reaction chamber and thecarrier chamber are evacuated and the semiconductor substrate is carriedfrom the reaction chamber to the carrier chamber. Then, the carrierchamber and the spare chamber are brought to atmospheric pressure andthe semiconductor substrate is carried from the carrier chamber to thespare chamber. Therefore, the thrust can be reduced or removed and theload of the driving part can be relieved. As a result, a small-sized andinexpensive semiconductor device producing apparatus can be obtained.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing a structure of a carrier shaftof a semiconductor substrate carrying means in accordance with a firstembodiment of the present invention;

FIG. 2 is a cross-sectional view showing a structure of a vacuumreaction chamber of a semiconductor device producing apparatus inaccordance with a second embodiment of the present invention;

FIG. 3 is a cross-sectional view showing a structure of a semiconductordevice producing apparatus in accordance with the first embodiment ofthe present invention;

FIG. 4 is a plan view showing a semiconductor device producing apparatusin accordance with the prior art;

FIG. 5 is a cross-sectional view showing a structure of a carrier shaftof a semiconductor substrate carrying means in accordance with the priorart;

FIG. 6 is a cross-sectional view showing a structure of a semiconductordevice producing apparatus in accordance with the prior art;

FIG. 7 is a perspective view showing an appearance of a semiconductorsubstrate carrying means; and

FIGS. 8(a) and 8(b) are a plan view and a perspective view forexplaining the operation of the arm member.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the present invention will be described in detail withreference to the drawings. FIG. 1 is a cross-sectional view showing astructure of a carrier shaft of a semiconductor substrate carrying meansusing a sealing mechanism in a semiconductor thin film producingapparatus in accordance with a first embodiment of the presentinvention. In FIG. 1, the same reference numerals as those shown in FIG.5 designate the same or corresponding parts.

A carrier chamber 11a has an opening at the center of its bottom and asemiconductor substrate carrying means 110a is provided at the openingvia a lower flange 8b. The semiconductor substrate carrying means 110acomprises a case 46a including a driving part 330a which drives thecarrier shaft 7 vertically, first to third vacuum bellows 8d to 8f whichvacuum seal a space between the carrier shaft 7 and the carrier chamber11a during the vertical movement of the carrier shaft 7, and an armmember 3a which carries the semiconductor substrate 1. The lower flange8b is fixed to the edge of the opening of the carrier chamber 11 by thebolts 13 and O rings 10 thereby to keep the carrier chamber airtight.The appearance of the semiconductor substrate carrying means 110a is thesame as that of the prior art shown in FIG. 7.

As shown in FIG. 1, the carrier shaft 7 surrounds the rotary shaft 3 ofthe arm member 3a via the bearing 4 and the seal 5. This seal 5 sealsthe carrier chamber 11a for the rotation of the rotary shaft 3. Thecarrier shaft 7 is fixed to the hollow flange 8c by the bolts 12 and Orings 9. Thus, the vacuum bellows and the carrier shaft 7 seal thecarrier chamber 11a.

An upper flange 8a and a lower flange 8b are provided above and belowthe hollow flange 8c, respectively. A first inner bellows 8d and asecond outer bellows 8e are provided between the hollow flange 8c andthe upper flange 8a. A third bellows 8f is provided between the lowerflange 8b and the hollow flange 8c. The ends of the third bellows 8f areairtightly welded to the hollow flange 8c and the lower flange 8b. Theends of the first inner bellows 8d and those of the second outer bellows8e are airtightly welded to the upper flange 8a and the hollow flange8c. In addition, the respective flanges 8a to 8c and the first to thirdbellows 8d to 8f are arranged around the rotary shaft 3.

An air inlet 8g through which air is introduced into a ring-shaped spaceformed by the first and second bellows 8d and 8e and the upper andhollow flanges 8a and 8c penetrates the hollow flange 8c. An exhaustport 8h for evacuating a ring-shaped space formed by the third bellows8f and the upper, lower and hollow flanges 8a to 8c is provided at thelower side of the flange 8a.

The operation will be described hereinafter. Here, the operation forcarrying the semiconductor substrate 1 from the spare chamber 61a shownin FIG. 3 to the reaction chamber 56d via the carrier chamber 11 or fromthe reaction chamber 56d to the spare chamber 61b via the carrierchamber 11a is the same as that of the prior art. Therefore, thedescription thereof will be omitted. Only the vertical operation of thecarrier shaft 7 of the semiconductor substrate carrying means 110a willbe described. When the carrier shaft 7 rises, the first and secondbellows 8d and 8e contract while the third bellows expand and then thehollow flange 8c reaches the upper end of the upper flange 8a.

When the arm member 3a with the holder 2 on which the semiconductorsubstrate 1 is place is moved to the stage 50 in the reaction chamber56d and then the carrier shaft 7 is lowered, the first and secondbellows 8d and 8e expand while the third bellows 8f contracts and thehollow flange 8c reaches the lower flange 8b.

In a case where the carrier shaft 7 vertically moves as described above,a thrust which pulls the carrier shaft 7 into the carrying chamber 11ais applied to the hollow flange 8c because of the vacuum carrier chamber11a. This thrust is in proportion to the area of the circle inside thethird bellows 8f. On the other hand, since air is introduced into thering-shaped space formed by the first and second bellows 8d and 8e andthe upper and hollow flanges 8a and 8c through the air inlet 8g, a forcein a direction reverse to the above thrust is applied to the hollowflange 8c. This force is in proportion to the area of the ring-shapedspace surrounded by the first and second bellows 8d and 8e. Accordingly,by making those two areas equal to each other, the mutual stresses arecanceled in the hollow flange 8c, so that the hollow flange 8c is wellbalanced. While the thrust of 300 Kg/cm² in the prior art can be reducedto 4 Kg/cm² or to negligible value in this first embodiment of thepresent invention.

In the above-described first embodiment, the vacuum bellows comprisesthe outer and inner bellows 8e and 8d and the single bellows 8f with thehollow flange 8c therebetween. In addition, air is introduced into thering-shaped space between the inner and outer bellows from the air inlet8g of the hollow flange 8c. Thus, the thrust applied to the carriershaft 7 is negligible, whereby the semiconductor substrate carryingmeans 110a can be minimized and an inexpensive semiconductor deviceproducing apparatus can be obtained.

In addition, the semiconductor device producing apparatus includes thecarrier chamber 11a having an opening capable of being vacuum sealed,the carrier shaft 7 comprising the holder 2, the arm member 3a and meansfor carrying the substrate 1, which vertically reciprocates in theopening of the carrier chamber 11a, and the sealing mechanism. Thissealing mechanism is fixed to the carrier shaft 7 and includes thehollow flange 8c having an air inlet 8g, the first and second bellows 8dand 8c, and the third bellows 8f. A ring-shaped space is formed betweenthe first and second bellows 8d and 8c and air is introduced into thisspace through the air inlet 8g of the hollow flange 8c. The thirdbellows 8f seals the carrier chamber 11a. Using this apparatus, thesemiconductor substrate 1 is processed as follows. The spare chamber andthe carrier chamber are evacuated and the semiconductor substrate iscarried from the spare chamber to the carrier chamber. Then, the carrierchamber and the reaction chamber are evacuated to a low vacuum and thesemiconductor substrate is carried from the carrier chamber to thereaction chamber. The semiconductor substrate is treated in the reactionchamber. Thereafter, the reaction chamber and the carrier chamber areevacuated and the semiconductor substrate is carried from the reactionchamber to the carrier chamber. Then, the carrier chamber and the sparechamber are brought to atmospheric pressure and the semiconductorsubstrate is carried from the carrier chamber to the spare chamber.Therefore, the thrust can be reduced or removed and the load on thedriving part 330a can be relieved. As a result, a small-sized andinexpensive semiconductor device producing apparatus can be obtained.

In the above-described first embodiment, the sealing mechanism of thepresent invention is applied to the semiconductor substrate carryingmeans 110a in the carrier chamber 11a in the semiconductor deviceproducing apparatus in which the arm member 3a in the carrier chamber11a vertically moves while the delivery stage 60 in the spare chamber61a and the stage 50 in the reaction chamber 56d are fixed. However, thesealing mechanism of the present invention can be also applied to thesemiconductor device producing apparatus in which the arm member 3a inthe carrier chamber 11a is fixed while the delivery stage 60 in thespare chamber 61a and the stage 50 in the reaction chamber 56dvertically move. In addition, the sealing mechanism of the presentinvention can also be applied to the delivery stage 60 and the stage 50which vertically move.

Description is given of a second embodiment of the present invention.FIG. 2 is a cross-sectional view showing a structure of the reactionchamber 56d of the semiconductor device producing apparatus, in whichthe stage 50 vertically moves, in accordance with the second embodimentof the present invention. In FIG. 2, the stage 50 includes a heater 51and a rotary shaft 300 and a carrier shaft 7 is provided around therotary shaft 300. The carrier shaft 7 is fixed to the hollow flange 8cand the upper flange 8a and the lower flange 8b are provided above andbelow the hollow flange 8c, respectively. A first inner bellows 8d and asecond outer bellows 8e are provided between the upper flange 8a and thehollow flange 8c and a third bellows 8f is provided between the lowerflange 8b and the hollow flange 8c.

An air inlet 8g is provided in the hollow flange 8c and air isintroduced into the ring-shaped space between the first and secondbellows 8d and 8e through the inlet 8g, whereby the thrust applied tothe hollow flange 8c because of the vacuum in reaction chamber 56d iscanceled.

It is supposed that the spare chamber (61a in FIG. 3) of thesemiconductor device producing apparatus in accordance with this secondembodiment has a delivery stage (60 in FIG. 3) which vertically movesand the delivery stage is fitted with the same sealing mechanism as thatin the reaction chamber 56d in FIG. 2.

The operation of this second embodiment will be described. The armmember (3a in FIG. 3) in the carrier chamber (11a in FIG. 3) moves abovethe delivery stage (60 in FIG. 3) in the spare chamber (61a in FIG. 3)and the semiconductor substrate 1 on the delivery stage is picked up bythe holder 2. Then, the delivery stage is lowered and the semiconductorsubstrate 1 is carried into the reaction chamber 56d by the arm member(3a in FIG. 3) in the carrier chamber (11a in FIG. 3). Then, the stage50 in the reaction chamber 56d rises and the semiconductor substrate 1is put on the stage 50.

In the above second embodiment, the sealing mechanism of the presentinvention is applied to the semiconductor device producing apparatus inwhich the arm member 3a in the carrier chamber 11a is fixed while thedelivery stage 60 in the spare chamber 61a and the stage 50 in thereaction chamber 56d vertically move. Also in this case, the sameeffects as described above can be obtained.

As is evident from the foregoing description, according to the presentinvention, a semiconductor device producing apparatus includes aprocessing chamber having an opening capable of being vacuum sealed, acarrier member comprising a substrate holder, an arm member and meansfor carrying the substrate, which vertically reciprocates in the openingof the processing chamber, and vacuum bellows which seal a space betweenthe processing chamber and the carrier member. The vacuum bellowscomprises an upper bellows and a lower bellows provided with a hollowflange therebetween. The upper bellows is a double structure having aninner bellows and an outer bellows. An air inlet penetrates the hollowflange and air is introduced through this air inlet into a ring-shapedspace between the inner bellows and the outer bellows. Therefore, thrustcaused by the vacuum in the processing chamber and applied to the hollowflange is canceled by the pressure of the introduced air and then thethrust can be reduced or removed, whereby the load of the driving partcan be relieved. As a result, a small-sized and inexpensivesemiconductor device producing apparatus can be obtained.

A method for producing a semiconductor device in accordance with thepresent invention uses an apparatus including a carrier chamber havingan opening and capable of being vacuum sealed, a carrier membercomprising a substrate holder, an arm member and means for carrying thesubstrate which vertically reciprocates in the opening of the carrierchamber, and a sealing mechanism. This sealing mechanism is fixed to thecarrier member and includes a flange having an air inlet, a firstbellows and a second bellows. The first bellows is a double structurehaving an inner bellows and an outer bellows, and air is introduced intoa ring-shaped space between the inner and outer bellows through the airinlet of the flange. The second bellows seals the carrier chamber. Theproduction process is as follows. A spare chamber and the carrierchamber are evacuated and the semiconductor substrate is carried fromthe spare chamber to the carrier chamber. Then, the carrier chamber anda reaction chamber are brought to a low vacuum and the semiconductorsubstrate is carried from the carrier chamber to the reaction chamber.The semiconductor substrate is treated in the reaction chamber.Thereafter, the reaction chamber and the carrier chamber are evacuatedand the semiconductor substrate is carried from the reaction chamber tothe carrier chamber. Then, the carrier chamber and the spare chamber aremade brought to atmospheric pressure and the semiconductor substrate iscarried from the carrier chamber to the spare chamber. Therefore, thethrust can be reduced or removed and the load of the driving part can berelieved. As a result, a small-sized and inexpensive semiconductordevice producing apparatus can be obtained.

What is claimed is:
 1. A semiconductor device producing apparatuscomprising:a carrier chamber having an opening and capable of beingvacuum sealed; a vertically reciprocating part comprising a substrateholder, an arm member, and means for carrying the substrate whichvertically reciprocates in the opening of said carrier chamber; and asealing mechanism sealing said carrier chamber to said verticallyreciprocating part comprising:a flange fixed to said verticallyreciprocating part and having a through hole and opposed first andsecond surfaces, an inner bellows and an outer bellows mounted to saidfirst surface of said flange and said carrier chamber, a ring-shapedspace being formed between said inner bellows and said outer bellows,the through hole opening into the ring-shaped space for admitting air,and a second bellows mounted to said second surface of said flange andsaid carrier chamber, sealing said carrier chamber.
 2. A semiconductordevice producing apparatus comprising:a spare chamber having an openingand capable of being vacuum sealed; a supporting member having a stagefor supporting a semiconductor substrate; a vertically reciprocatingpart surrounding said supporting member which vertically reciprocates inthe opening of said spare chamber; and a sealing mechanism sealing saidspare chamber to said vertically reciprocating part comprising:a flangefixed to said vertically reciprocating part and having a through holeand opposed first and second surfaces, an inner bellows and an outerbellows mounted to said first surface of said flange and said sparechamber, a ring-shaped space being formed between said inner bellows andsaid outer bellows, the through hole opening into the ring-shaped spacefor admitting air, and a second bellows mounted to said second surfaceof said flange and said spare chamber, sealing said spare chamber.
 3. Asemiconductor device producing apparatus comprising:a reaction chamberhaving an opening and capable of being vacuum sealed; a supportingmember having a stage for supporting a semiconductor substrate, heatingmeans, and rotation means; a reaction gas inlet for introducing areaction gas into said reaction chamber for treating a substrate; avertically reciprocating part surrounding said supporting member whichvertically reciprocates in the opening of said reaction chamber; and asealing mechanism sealing said reaction chamber to said verticallyreciprocating part comprising:a flange fixed to said verticallyreciprocating part and having a through hole and opposed first andsecond surfaces, an inner bellows and an outer bellows mounted to saidfirst surface of said flange and said reaction chamber, a ring-shapedspace being formed between said inner bellows and said outer bellows,the through hole opening into the ring-shaped space for admitting air,and a second bellows mounted to said second surface of said flange andsaid reaction chamber, sealing said reaction chamber.
 4. Thesemiconductor device producing apparatus as defined in claim 1comprising:a vertically reciprocating holder for holding said verticallyreciprocating part; a guide part for guiding vertical reciprocation ofsaid holder; a driving mechanism for vertically reciprocating saidholder; and a motor for driving said driving mechanism.
 5. Thesemiconductor device producing apparatus as defined in claim 1 whereinsaid vertically reciprocating part comprises:a semiconductor substratecarrying means comprising a link mechanism having first, second andthird arms and a holder disposed on said third arm for holding asemiconductor substrate; and control means for controlling operation ofsaid semiconductor substrate carrying means.